mixers - chip 3 3 - 126 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com HMC521 gaas mmic i/q mixer 8.5 - 13.5 ghz v00.1104 general description features typical applications the HMC521 is a compact i /q mmic mixer which can be used as either an image reject mixer or a single sideband upconverter. the chip utilizes two standard hittite double balanced mixer cells and a 90 degree hybrid fabricated in a gaas mesfet process. all data shown below is taken with the chip mounted in a 50 ohm test xture and includes the effects of 1 mil diameter x 20 mil length bond wires on each port. a low frequency quadrature hybrid was used to produce a 100 mhz usb if output. this product is a much smaller alternative to hybrid style image reject mixers and single sideband upconverter assemblies. electrical specifications, t a = +25 c, if= 100 mhz, lo = +15 dbm* parameter min. typ. max. min. typ. max. units frequency range, rf/lo 8.5 - 13.5 10.5 - 11.7 ghz frequency range, if dc - 3.5 dc - 3.5 ghz conversion loss (as irm) 8 10 7.5 9.5 db image rejection 20 30 30 40 db 1 db compression (input) +14 +15 dbm lo to rf isolation 35 45 40 50 db lo to if isolation 17 22 18 23 db ip3 (input) +23 +24 dbm amplitude balance 0.3 0.1 db phase balance 4 4 deg * unless otherwise noted, all measurements performed as downconverter. functional diagram the HMC521 is ideal for: ? point-to-point and point-to-multi-point radio ? military radar wide if bandwidth: dc - 3.5 ghz image rejection: 40 db lo to rf isolation: 45 db high input ip3: +24 dbm
mixers - chip 3 3 - 127 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com conversion gain vs. temperature input p1db vs. temperature conversion gain vs. lo drive image rejection vs. temperature return loss input ip3 vs. lo drive data taken as irm with external if hybrid -20 -15 -10 -5 0 8 9 10 11 12 13 14 +25c +85c -55c conversion gain (db) rf frequency (ghz) 0 10 20 30 40 50 8 9 10 11 12 13 14 +25c +85c -55c image rejection (db) rf frequency (ghz) -20 -15 -10 -5 0 8 9 10 11 12 13 14 +11 dbm +13 dbm +15 dbm +17 dbm +19 dbm conversion gain (db) rf frequency (ghz) -25 -20 -15 -10 -5 0 8 9 10 11 12 13 14 rf lo return loss (db) frequency (ghz) 2 4 6 8 10 12 14 16 18 20 8 9 10 11 12 13 14 +25c +85c -55c p1db (dbm) rf frequency (ghz) 5 10 15 20 25 30 35 8 9 10 11 12 13 14 lo = +13 dbm lo = +15 dbm lo = +17 dbm lo = +19 dbm ip3 (dbm) rf frequency (ghz) HMC521 gaas mmic i/q mixer 8.5 - 13.5 ghz v00.1104
mixers - chip 3 3 - 128 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com isolations if bandwidth* upconverter performance conversion gain vs. lo drive amplitude balance vs. lo drive phase balance vs. lo drive quadrature channel data taken without if hybrid upconverter performance sideband rejection vs. lo drive -60 -50 -40 -30 -20 -10 8 9 10 11 12 13 14 isolation (db) rf frequency (ghz) lo/if2 lo/if1 rf/if1 lo/if2 lo/rf -20 -15 -10 -5 0 0.5 1 1.5 2 2.5 3 3.5 return loss conversion gain response (db) if frequency (ghz) -2 -1.5 -1 -0.5 0 0.5 1 1.5 2 8 9 10 11 12 13 14 lo = +13 dbm lo = +15 dbm lo = +17 dbm lo = +19 dbm amplitude balance (db) rf frequency (ghz) -10 -5 0 5 10 8 9 10 11 12 13 14 lo = +13 dbm lo = +15 dbm lo = +17 dbm lo = +19 dbm phase balance (degrees) rf frequency (ghz) -20 -15 -10 -5 0 8 9 10 11 12 13 14 lo = +11 dbm lo = +13 dbm lo = +15 dbm lo = +17 dbm lo = +19 dbm conversion gain (db) rf frequency (ghz) -50 -40 -30 -20 -10 0 8 9 10 11 12 13 14 lo = +11 dbm lo = +13 dbm lo = +15 dbm lo = +17 dbm lo = +19 dbm sideband rejection (dbc) rf frequency (ghz) * conversion gain data taken with external if hybrid HMC521 gaas mmic i/q mixer 8.5 - 13.5 ghz v00.1104
mixers - chip 3 3 - 129 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com harmonics of lo lo freq. (ghz) nlo spur at rf port 1234 8.5 42 44 44 70 9.5 50 53 59 77 10.5 51 54 63 xx 11. 5 47 5 8 6 6 x x 12.5 45 59 70 xx 13.5 45 57 xx xx lo = + 15 dbm values in dbc below input lo level measured at rf port. mxn spurious outputs nlo mrf01234 0xx-5292352 1270515981 29285768292 3 9292929292 4 9292929292 rf = 10.6 ghz @ -10 dbm lo = 10.5 ghz @ +15 dbm data taken without if hybrid all values in dbc below if power level absolute maximum ratings rf / if input +20 dbm lo drive + 27 dbm channel temperature 150c continuous pdiss (t=85c) (derate 7.07 mw/c above 85c) 460 mw thermal resistance (r th ) (junction to die bottom) 141.4 c/w storage temperature -65 to +150 c operating temperature -55 to +85 deg c outline drawing notes: 1. all dimensions are in inches [mm] 2. die thickness is .004 3. typical bond pad is .004 4. backside metalization: gold 5. bond pad metalization: gold 6. backside metal is ground 7. connection not required for unlabeled bond pads. 8. overall die size .002 die packaging information [1] standard alternate gp-2 [2] [1] refer to the packaging information section for die packaging dimensions. [2] for alternate packaging information contact hittite microwave corporation. electrostatic sensitive device observe handling precautions HMC521 gaas mmic i/q mixer 8.5 - 13.5 ghz v00.1104
mixers - chip 3 3 - 130 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com pad number function description interface schematic 1rf this pad is ac coupled and matched to 50 ohms from 8.5 to 13.5 ghz. 4lo this pad is ac coupled and matched to 50 ohms from 8.5 to 13.5 ghz. 2 (5) if2 this pad is dc coupled. for applications not requir- ing operation to dc, this port should be dc blocked externally using a series capacitor whose value has been chosen to pass the necessary if frequency range. for operation to dc, this pad must not source/ sink more than 3ma of current or die non-function and possible die failure will result. pads 5 and 6 are alternate if ports. 3 (6) if1 gnd the backside of the die must be connected to rf/dc ground. pad descriptions assembly diagrams HMC521 gaas mmic i/q mixer 8.5 - 13.5 ghz v00.1104
mixers - chip 3 3 - 131 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com mounting & bonding techiniques for millimeterwave gaas mmics the die should be attached directly to the ground plane eutectically or with conductive epoxy (see hmc general handling, mounting, bonding note). 50 ohm microstrip transmission lines on 0.127mm (5 mil) thick alumina thin lm substrates are recommended for bringing rf to and from the chip (figure 1). if 0.254mm (10 mil) thick alumina thin lm substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. one way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (figure 2). microstrip substrates should be brought as close to the die as possible in order to minimize bond wire length. typical die-to-substrate spacing is 0.076mm (3 mils). handling precautions follow these precautions to avoid permanent damage. storage: all bare die are placed in either waf e or gel based esd protective containers, and then sealed in an esd protective bag for shipment. once the sealed esd protective bag has been opened, all die should be stored in a dry nitrogen environment. cleanliness: handle the chips in a clean environment. do not attempt to clean the chip using liquid cleaning systems. static sensitivity: follow esd precautions to protect against > 250v esd strikes. transients: suppress instrument and bias supply transients while bias is applied. use shielded signal and bias cables to minimize inductive pick-up. general handling: handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. the surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or ngers. mounting the chip is back-metallized and can be die mounted with ausn eutectic preforms or with electrically conductive epoxy. the mounting surface should be clean and a t . eutectic die attach: a 80/20 gold tin preform is recommended with a work surface temperature of 255 c and a tool temperature of 265 c. when hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 c. do not expose the chip to a temperature greater than 320 c for more than 20 seconds. no more than 3 seconds of scrubbing should be required for attachment. epoxy die attach: apply a minimum amount of epoxy to the mounting surface so that a thin epoxy llet is observed around the perimeter of the chip once it is placed into position. cure epoxy per the manufacturers schedule. wire bonding ball or wedge bond with 0.025 mm (1 mil) diameter pure gold wire is recommended. thermosonic wirebonding with a nominal stage temperature of 150 c and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. use the minimum level of ultrasonic energy to achieve reliable wirebonds. wirebonds should be started on the chip and terminated o n the package or substrate. all bonds should be as short as possible <0.31 mm (12 mils). 0.102mm (0.004?) thick gaas mmic wire bond rf ground plane 0.127mm (0.005?) thick alumina thin film substrate 0.076mm (0.003?) figure 1. 0.102mm (0.004?) thick gaas mmic wire bond rf ground plane 0.254mm (0.010?) thick alumina thin film substrate 0.076mm (0.003?) figure 2. 0.150mm (0.005?) thick moly tab HMC521 gaas mmic i/q mixer 8.5 - 13.5 ghz v00.1104
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